Czochralski method of single-crystal growth
Método Czochralski de crecimiento de monocristales
- Date
- 1916 · confidence high
- Place
- Berlin, Germany
- Credited to
- Jan Czochralski
- Field
- Matter & energy
What it is
A procedure for obtaining a single crystal by slowly pulling a seed from a melt. Czochralski devised it while measuring the crystallisation rate of metals, and it became the standard method for making silicon wafers.
It was found in 1916 at AEG in Berlin and published in 1918. Its application to semiconductors was by Teal and Little (Bell Labs, 1950). The story of the pen dipped in tin instead of ink is undocumented tradition.
What it led to
- silicon and germanium wafers for transistors and chips
- single crystals for lasers, optical crystals and solar panels
- the foundation of the semiconductor industry