Samsung V-NAND, 3D flash memory
V-NAND, memoria flash 3D de Samsung
- Date
- 2013 · confidence high
- Place
- Hwaseong, Gyeonggi, South Korea
- Credited to
- Samsung Electronics
- Field
- Knowledge & symbols
What it is
NAND flash memory with cells stacked vertically, 24 layers and 128 Gb, mass-produced from August 2013. It got round the scaling limit of planar flash and allowed solid-state drive capacities to multiply.
Toshiba had proposed 3D flash (BiCS) in 2007 and Samsung presented it as TCAT in 2009; Samsung was the first to mass-produce it using charge-trap cells.
What it led to
- large, low-cost SSDs
- 3D NAND of more than a hundred layers across the industry
- storage in phones and data centres