The p-n junction in semiconductors
Unión p-n en semiconductores
- Date
- 1940 · confidence high
- Place
- Bell Labs, Holmdel, New Jersey, United States
- Credited to
- Russell Ohl
- People
- 👤 Russell Ohl1898–1987
- Field
- Matter & energy
What was discovered
Ohl observes that a silicon ingot with a boundary between zones of different impurities rectifies current and generates voltage when illuminated: the p-n junction. It is the basic component of the diode, the transistor and the solar cell.
The terms 'p-type' and 'n-type' were coined at Bell Labs as a result of this work.
What it led to
- Transistor (1947)
- Silicon solar cell (1954)
- Diodes and LEDs
- Microelectronics
Built on
- Band theory (Bloch, Wilson, 1928-1931)
- Galena and copper-oxide rectifiers
- Silicon purification
Made possible
- Bipolar junction transistor1948
- Silicon photovoltaic solar cell1954
- Silicon diode
- Photovoltaic cell
- Junction transistor