FinFET (3D transistor)
Transistor FinFET tridimensional
- Date
- 2011 · confidence high
- Place
- UC Berkeley (1999) and Intel, Hillsboro, Oregon, United States (22 nm production, 2011)
- Credited to
- Chenming Hu, Tsu-Jae King Liu and Jeffrey Bokor (Berkeley); Intel Ivy Bridge
- People
- 👤 Chenming Hu1947–👤 Jeffrey Bokor👤 Tsu-Jae King Liu1956–
- Field
- Matter & energy
What it is
Transistor whose channel is a vertical fin surrounded by the gate on three sides, reducing leakage at nanometre scales. It extended Moore's law beyond 22 nm.
What it led to
- High-performance, low-power mobile chips
- TSMC and Samsung's leadership in advanced fabrication and dependence on Taiwan
- Gate-all-around transistors at 3 and 2 nm
Built on
- MOSFET (metal-oxide-semiconductor field-effect transistor)1959
- Planar process1959
- immersion photolithography
Made possible
- Apple M1 system-on-chip2020
- AI chips
- gate-all-around transistors